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In this work, Micro- and Nanofabrication technology was used to fabricate and demonstrate a simple Carbon nanotubes (CNTs) field effect transistors (FETs) which is constructed on Si/SiO2 substrate. Simple photolithography technique was used for patterning the photoresist using a mask and a UV LEDs. Thermal evaporator was utilized to deposit coper metal on the substrate. After liftoff, electrodes of 5 μm width and spacing of 3 μm were achieved. Deilecrophrisis technique was adopted to fetch the CNTs towards the fabricated electrode fingers. The fabricated CNT-FETs exhibit high electron mobility, around 10000 cm2/Vs. Current transfer characteristic observed that the device has p-type semiconductor properties, which can be attributed to the oxygen molecules absorption of CNTs oxygen from the testing environment.